Behnam Okhravi - Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
Mohsen Ghasemi - Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran

HEMT transistors are field-effect transistors formed from the combination of two semiconductors with different energy gaps. Presented here is a simulation of an AlGaN/GaN-based high electron mobility transistor (HEMT) on a sapphire substrate, which was conducted in this work. We used the "SILVACO Software" to simulate the manufacturing process, which was based on "ATLAS" principles and procedures, and we were able to generate the ID-VG, ID-VD, power gain, current gain, polarization charge, transconductance (Gm), conduction band energy, and valence band energy curves as a result.

HEMT, Silvaco, ATLAS, AsGaN, GaN