Gholamreza Abaeiani - Tarbiat Modares University
Vahid Ahmadi - Tarbiat Modares University
Kamyar Saghafi - Shahed University

The new structure for quantum dot photodetectors is presented and its performance is analyzed. This structure enhances the efficiency and provides wavelength selective response. It can be impalement by any semiconductors structure such as IV-IV and III-V materials in which one can make optical waveguide. Using experimental reported data on quantum dot photodetectors, Ge quantum dot on Si microring photodetectors are designed and studied and some estimation on their efficiency and spectral selectivity, are presented and discussed. It is shown that one can enhance the efficiency of quantum dot photodetectors more than one order and simultaneously achieve single-channel selective response with subnanometer spectral resolution in C and L optical telecommunication bands

Integrated Optics, Silicon, Germanium, Waveguide, Photodetectors