Danial Keighobadi - Department of Electronic Engineering, Semnan university
Saeed Jafari - Department of Electronic Engineering, Imam Khomeini Naval University of Noshahr
Majid Eshagh Nimvari - Department of Electronic Engineering, Imam Khomeini Naval University of Noshahr

Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge1-xSnx–based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage

Tunnel FET, Germanium, logic, supply voltage