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Quantum Current Modeling in Nano-transistors with a Quantum Dot

عنوان مقاله: Quantum Current Modeling in Nano-transistors with a Quantum Dot
شناسه ملی مقاله: NCNNN02_043
منتشر شده در دومین کنفرانس ملی نانو ساختارها،علوم و مهندسی نانو در سال 1396
مشخصات نویسندگان مقاله:

Seyed Norolah Hedayat - Department of physics, Faculty of science, Urmia University, Urmia, Iran
Mohammad Taghi Ahmadi - Department of physics, Faculty of science, Urmia University, Urmia, Iran
Fariba Savari - Department of physics, Faculty of science, Urmia University, Urmia, Iran

خلاصه مقاله:
Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterials in the carbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductor materials, from the elements in the periodic groups of II-VI, III-V or IV-VI. Thebasis of Single electron devices (SEDs) is controllable single electron transfer between small conducting islands . In this paper quantum current of double barrier single electron transistor (SET) is modelled and models current-voltage characteristic based on quantum transport and theelectronic properties due to the dependence on structural parameter are analyzed.

کلمات کلیدی:
Single Electron Transistor, Double Barrier, Quantum Current, Fullerene, Island

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/743606/