Seyed Norollah Hedayat - Department of Physics, Faculty of Science, Urmia University, ۷۵۱۷۵, Urmia, Iran
Razali Bin Ismail - Electronics and Computer Engineering Department, Faculty of Electrical Engineering, University Technology Malaysia, ۸۱۳۱۰ Johor Bahro, Malaysia,
Mohammad Taghi Ahmadi - Department of Physics, Faculty of Science, Urmia University, ۷۵۱۷۵, Urmia, Iran

Graphene is characterized with amazing carrier transport property and high sensitivity at the single molecule level, making them great as resources used in Nano electronic applications. Bilayer graphene nanoribbons consist of two monolayers graphene stacked in two possible configurations. Bilayer graphene nanoribbons can be employed in digital electronics because its band gap can be varied by means of an external perpendicular electric field, and can induce a significant band gap between the valence and conduction bands turning it from a zero-gap semiconductor to an insulator. The present research models transmission coefficient of the Schotcky structure in the graphene-based transistor based on semiconducting channel width and then analysis its quantum properties given dependence on structural parameter.

bilayer graphene, transmission coefficient, transistor, Schotcky.