Mohammad Taghi Ahmadi, - Faculty of Electrical Engineering, Universiti Teknologi Malaysia
Ismail Saad,
Vijay K. Arora

The mobility and saturation velocity are the two important parameters that control the charge transport in a conducting MOSFET channel. The limitation drift velocity is found to be appropriate thermal velocity for a nondegenerately doped, increasing with the temperature, but independent of carrier concentration. However, the limitation drift velocity is the Fermi velocity for degenerately doped silicon, increasing with carrier concentration but independent of the temperature.

Saturation velocity, Fermi velocity, Thermal velocity, nanowire