A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

سال انتشار: 1400
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 180

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شناسه ملی سند علمی:

JR_IJE-34-7_016

تاریخ نمایه سازی: 12 مرداد 1400

چکیده مقاله:

This paper presents a one-dimensional analytical model for calculating gate capacitance in Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic approach. The proposed model is inspired by the fact that quantum capacitance appears for the Carbon Nanotube (CNT) which has a low density of states. The gate capacitance is a series combination of dielectric capacitance and quantum capacitance. The model so obtained depends on the density of states (DOS), surface potential of CNT, gate voltage and diameter of CNT. The quantum capacitance obtained using developed analytical model is ۲.۸۴ pF/cm for (۱۹, ۰) CNT, which is very close to the reported value ۲.۵۴ pF/cm. While, the gate capacitance comes out to be ۲۴.۳×۱۰-۲ pF/cm. Further, the effects of dielectric thickness and diameter of CNT on the gate capacitance are also analysed. It was found that as we reduce the thickness of dielectric layer, the gate capacitance increases very marginally which provides better gate control upon the channel. The close match between the calculated and simulated results confirms the validity of the proposed model.

کلیدواژه ها:

Carbon Nanotube Field Effect Transistor ، Quantum Capacitance ، Gate Capacitance ، Gate-all-around Structure

نویسندگان

A. Dixit

Nanomaterial Device Laboratory, Department of Electrical and Electronics Engineering,Birla Institute of Technology and Science, Pilani, Rajasthan, India

N. Gupta

Nanomaterial Device Laboratory, Department of Electrical and Electronics Engineering,Birla Institute of Technology and Science, Pilani, Rajasthan, India

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  • Bousari N. B. and Anvarifard M. K., “A Theoretical Study ...
  • Khadem Hosseini V., Dideban D., Ahmadi M. T., and Ismail ...
  • Prakash P., Mohana Sundaram K. and Anto Bennet M., “A ...
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  • Shirazi S. G. and Mirzakuchaki S., “High on/off current ratio ...
  • Murthy G. R., Singh A. K., Hossen J. and Velrajkumar ...
  • Jena B., Pradhan K. P., S. Dash, Mishra G. P., ...
  • Chaudhury S. and Sinha S. K., “Carbon Nanotube and Nanowires ...
  • Shailendra S. R. and Ramakrishnan V. N., “Analysis of quantum ...
  • Wong H-S. P. and Akinwande D., “Carbon Nanotube and Graphene ...
  • Dai J., Li J., Zeng H. and Cui X., “Observation ...
  • Ahmed Z., Zhang L., and Chan M., “Gate Capacitance Model ...
  • Singh A. K., “Analytical analysis of quantum capacitance in nano-scale ...
  • Kordrostami Z., Sheikhi M. H. and Zarifkar A., “Influence of ...
  • Djamil R., Salima B. and Kheireddine L., “Performance Enhancement of ...
  • Lundstrom M. S. and Guo J., Nanoscale Transistors: Device Physics, ...
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  • Franklin A. D., Koswatta S. O., Farmer D, Tulevski G ...
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