Design and Characterization of Single Quantum Well GaAs-based Laser Diode

The GaAs- based laser diode with single quantum well structure is theoretically designed and characterized using simulation software PICS۳D. The simulator self-consistently combines ۳D simulation of carrier transport, self-heating, and optical waveguiding. Simulation results show that proposed laser structure operates with multi- mode optical fields at ۰.۸۳۳-۰.۸۳۴ micron wavelength range. This situation is desirable for many optical systems