A review of the effect of electrostatic discharge (ESD) on MOSFET and several solutions

Static electricity and electrostatic discharge (ESD) has become a serious concern of both device manufacturers and users; Virtually all semiconductor devices are more or less sensitive to ESD, and the problem is further compounded by the omnipresence of static electricity. MOSFETs (metal-oxide-semiconductor field-effect transistors) are particularly susceptible to destruction by ESD because a thin gate the oxide layer is inherent in any MOS system. we in this article check any solutions for solve this problem.