High Breakdown Voltage and ReducedTemperature in LDMOS Transistor with BuriedOxide Engineering

In this paper a new LDMOS transistor isproposed to have high breakdown voltage and lowerspecific on-resistance using GaN. The GaN materialwith wider bandgap than silicon is useful to have betterbehavior in the LDMOS transistor. Moreover, theapplication of the LDMOS will be improved as it iscompared with conventional LDMOS transistor. Thesimulation of the proposed Omega shape GaN windowin the buried oxide of the LDMOS transistor (OGLDMOS)with ATLAS simulator shows that replacingGaN with oxide reduces maximum lattice temperaturein the device. So, the proposed structure could be animportant device in power technology with highbreakdown voltage and low temperature.