Overview of Low-Voltage Low-Power Design Techniques and Design Low-Voltage Low-Power Low-Noise Operational Amplifier

سال انتشار: 1392
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 89

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شناسه ملی سند علمی:

JR_TDMA-2-2_003

تاریخ نمایه سازی: 28 مرداد 1402

چکیده مقاله:

In this paper an overview of circuit techniques dedicated to design low-power low-voltage is presented. These techniques (a) dynamic threshold voltage MOSFET (DTMOS)  (b) bulk-driven and (c) current-driven bulk (CDB) are applied to design low-power low-voltage and low-noise CMOS operational amplifier (op amp) using sub-threshold region of MOSFET for bio-medical instrumentation operating with a ۰.۶ V supply. The operational amplifier is designed and simulated using TSMC ۰.۱۸μm CMOS technology. With DTMOS technique, the open loop gain is ۶۰.۵۱ dB, the unity gain-bandwidth (UGBW) is ۱۲.۰۸ kHz, phase margin is ۵۲.۳ degree and power consumption is ۵۳.۲۱ nW. With bulk-driven technique, the open loop gain is ۴۹.۰۴ dB, the unity gain-bandwidth is ۳.۳۲ kHz, phase margin is ۷۱.۹۶ degree and power consumption is ۵۳.۳ nW. With CDB technique, the open loop gain is ۵۳.۵۴ dB, the unity gain-bandwidth is ۱۹ kHz, phase margin is ۵۰ degree and power consumption is ۵۵.۷۹ nW. DTMOS technique provides high open loop gain, CDB technique provides high unity gain-bandwidth and bulk-driven technique provides better phase margin. Also DTMOS technique has less input-referred noise than the other methods.

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نویسندگان

Saber Izadpanah Tous

Sadjad Institute for Higher Education

Mahmoud Behroozi

Sadjad Institute for Higher Education

Hooman Nabovati

Sadjad Institute for Higher Education

Vahid Asadpour

Sadjad Institute for Higher Education

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