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مقالات فارسیISIکنفرانسهاژورنالها

Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications

محل انتشار: ماهنامه بین المللی مهندسی، دوره: 37، شماره: 6
سال انتشار: 1403
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 40

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استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:
https://civilica.com/doc/1941846

شناسه ملی سند علمی:

JR_IJE-37-6_002

تاریخ نمایه سازی: 28 اسفند 1402

چکیده مقاله:

A High-K Dielectric Dual Metal Gate FinFET (DMG-FinFET) is proposed in this work to improve the drain current and electrical characteristics of the device. The proposed device employing dielectric materials such as Silicon dioxide, Hafnium oxide and Titanium oxide and investigated in ۱۰ nm technology. The architecture represents a critical advancement in transistor design, addressing challenges posed by traditional high-K gate dielectric materials being HfO۲ and TiO۲. This work employs a comprehensive approach, incorporating simulation techniques to evaluate the performance metrics of DMG FinFET. This investigation encompasses key aspects being transistor characteristics, power consumption, and reliability. This high-k dielectric (HfO۲) Dual material Gate –FinFET device achieving improved performance parameters such as Ion= ۳۲.۱۲ mA, Ioff= ۳۳ μA, Gm(max) = ۰.۰۴۵ S, Gds(max) = ۰.۰۲۴ S and Ron(max) = ۳۲.۸۷ kΩ. Therefore this work is suitable for designing high performance devices with high-k dielectric materials being HfO۲ and TiO۲.  The impact of dual metal gate materials on Ion, Ioff, Gm (max), Gds(max) and Ron(max) is calculated and improved ۶۴% compared to conventional device.

کلیدواژه ها:

Dielectric Material ، On current ، Off current ، Silicon dioxide ، Nano Technology

نویسندگان

P. Padmaja

Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

D. Vemana Chary

Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

R. Erigela

Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

G. Sirisha

Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India-۵۰۰۰۹۷

S. K. ChayaDevi

Department of information Technology, Vasavi College of Engineering, Hyderabad, India

M. C. Pedapudi

Department of Electronics and Communications Engineering, Vignan's Foundation for Science Technology & Research (Deemed to be University), Vadlamudi, Guntur District, A.P, India

B. Balaji

Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

S. Cheerala

Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

V. Agarwal

Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

Y. Gowthami

Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

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