Improving Switching and Electrical Characteristics of a Silicon Nanowire Tunnel FET via Gate Oxide Engineering Method

In this letter, first the structure and electrical characteristics of a Vertical Silicon Nanowire Tunnel FET will beinvestigated and its characteristics obtained via numerical simulations. Then the Gate Oxide of this device, replaced witha bilayer one via the scientific and applicable method of Gate Oxide Engineering. After altering the Gate oxide, weobserved improvements in both electrical and switching characteristics of the device. The improved characteristics of theproposed device are 2 × 10−5 for ON-state current (48% more), 0.51 V for Threshold Voltage (18% improvement) andSubthreshold Swing 32mV/dec (25% improvement) with respect to the reference device. Off-state Current remainedunaffected, hence ION/IOFF ratio improved from 9.0 × 1011 to 1.33 × 1012 which means 48% more drive current atVDS=1.2V.