Presenting a two-valley Monte Carlo model for simulating and analyzing electron behavior in GaAs bulk and investigating the effects of electron transitions (Gunn Effect)

This article introduces a two-valley Monte Carlo model for simulating and analyzing the behavior of electrons within a GaAs semiconductor. The simulation considers various factors contributing to electron scattering, such as phonons and impurity atoms. Energy bands are modeled in a non-parabolic form, including central (Г) and satellite (L) valleys for the Monte Carlo simulation. The electron behavior within the bulk is simulated under different conditions, including weak and strong fields, and various temperatures, usin the Matlab software. The amount of velocity peak at temperatures ۱۰۰, ۲۰۰, and ۳۰۰ K is equal to ۳.۴۷×۱۰۵, ۲.۴۸×۱۰۵, and ۱.۷۶×۱۰۵ m/s for concentration of ۱×۱۰۱۴ cm-۳, respectively. Also, the amount of saturation velocity at temperature ۳۰۰ K is calculated ۰.۹۵×۱۰۵ m/s for concentration of ۱×۱۰۱۴ cm-۳. Material parameters, including electron energy, effective mass changes, electron presence probabilities in central and satellite valleys, and contributions from scattering mechanisms, are calculated. The article further explores the impact of the Gunn Effect in devices exhibiting negative resistance, paving the way for developing electronic devices based on GaAs materials. To validate the proposed model, some simulation results from Monte Carlo simulations are compared with Silvaco software results.