CNTFET-based Full Adder with Ultra Low-Power and PDP for Mobile Applications
سال انتشار: 1399
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 435
فایل این مقاله در 5 صفحه با فرمت PDF قابل دریافت می باشد
- صدور گواهی نمایه سازی
- من نویسنده این مقاله هستم
استخراج به نرم افزارهای پژوهشی:
شناسه ملی سند علمی:
ETECH05_019
تاریخ نمایه سازی: 11 اردیبهشت 1400
چکیده مقاله:
Designing smaller area, low power consumption, low PDP and high speed full adder is always in demand. There are growing requests for low-power and high speed full adders in several applications of computing systems such as computer graphics, scientific computing and image processing. As the channel length tends to the nanoscale regime, the use of MOSFET as a basic device in the full adder achieves its functional limitations such as average power dissipation and speed. In this paper, a ۱-bit full adder cell is proposed using a CNTFET transistor with a supply voltage of ۰.۵V for mobile applications. Using HSPICE software, all the main full adder parameters such as leakage power, average power consumption, delay and power delay product (PDP) were measured. In this study, leakage power of ۳۳.۵pW, delay of ۱۲۳.۷۱ps, average power consumption of ۹۳nW and PDP of ۱۱.۵۱×۱۰-۲۱ J were obtained.
کلیدواژه ها:
نویسندگان
Amir Baghi Rahin
Department of Electrical Engineering, Sardroud Branch, Islamic Azad University, Tabriz, Iran
Afshin Kadivarian
Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
Vahid Baghi Rahim
Department of Electrical Engineering, Sardroud Branch, Islamic Azad University, Tabriz, Iran