Field Effect Nanotransistors Based on UTS Mosfet (a Type of Nanotransistor With High Dielectric Coefficient)

Note: In  the structure of field-effect nano-transistors based on carbon-graphene nanotubes with UTS , carbon nanotubes are  completely placed inside the gate insulation for more benefit  .

Placing the gate around and in the entire nanotube which improves the performance. First, the carbon nanotube which has an insulating coating is placed on the wafer, and the source and drain metallic connection is placed on both sides of it, then to determine To separate the source and drain area, si is added under the carbon nanotube. This removal continues until reaching the insulation of the substrate. Then, using materials that have a high dielectric coefficient, insulation is created between the gate and the source and drain, and metal is placed on this insulation to better connect the gate metal to the carbon nanotube.

In  the structure of field-effect nanotransistors based on carbon-graphene nanotubes with UTS,  the process of making nanotubes has caused variability in the diameter of the tubes, which usually has a value between 1 and 2 nm. By changing the diameter of the nanotube, the band gap changes, and as a result, the threshold voltage of the UTS transistor and the current of the UTS transistor change. Unlike back gate carbon nanotube field effect transistors, a  large number of this type of transistor can be made on one wafer, because the gates of each one  are separate. Also, due to the small thickness of the gate dielectric in the nano-transistor, a  larger electric field can be created with a low voltage on the carbon nano-tube. All  field effect nanotransistors based on carbon-graphene nanotubes with UTS  on a wafer turn off and on at the same time because they have the same gate. The thickness of the oxide layer is high, and on the other hand, the production process is such that the contact surface of the nanotube Carbon with gate oxide is low and causes problems to turn off and on the part with low voltage.

Conclusion :

In  the structure of field-effect nanotransistors based on carbon nanotubes - graphene with UTS  , carbon nanotubes  are completely inserted into the gate insulation.